Abstract
A high power wideband feedback amplifier module using AlGaN/ GaN high electron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At mid-band frequency, power added efficiency of 20% and a saturation power level of 29.5 dBm were obtained at a drain voltage of 12V (V/sub ds/) and a gate voltage of -3 V (V/sub gs/).
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