Abstract
Fabrication and performance of a high-power bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser with 430 µm diameter are described. The device realises the maximum room temperature CW output power 1.52 W at 987.6 nm with FWHM 0.8 nm. The far-field divergence angle is below 20°. Reliability test shows at 70°C an output power 0.35 W over 500 h.
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