A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics

Abstract

A high power bottom-emitting InGaAs/GaAsP vertical-cavity surface-emitting laser with a large aperture (400 µm diameter) is described. The device has been fabricated by using oxidation confinement technology. The device threshold current is 610 mA, and the maximum output power is up to the watt regime (1.42 W) at room temperature (24 °C) with a pulse condition (pulse width of 50 µs, repetition rate of 1 kHz). The maximum continuous wave optical output power at room temperature is as high as 1.09 W. The lasing peak wavelength is 987 nm, the full width at half-maximum is 0.9 nm, and the far-field divergence angle is below 10°. The temperature characteristics of the device are also obtained. A special temperature dependence of the threshold current in the vertical-cavity surface-emitting laser structure is observed; the characteristic temperature T0 is over 220 K, and the wavelength shift with temperature is only about 0.06 nm K−1.