High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

Abstract

A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point ( $P_{\text {1 dB}}$ ) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18- $\mu \text{m}$ CMOS process.