Abstract
We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
Highlights
Among the various techniques for light source integration on silicon photonic integrated circuits (Si-PICs) [1], flip-chip integration of a tilted vertical-cavity surface-emitting laser (VCSEL) over a grating coupler, Fig. 1, offers certain advantages [2,3]
With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL
While the VCSEL is designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications
Summary
Among the various techniques for light source integration on silicon photonic integrated circuits (Si-PICs) [1], flip-chip integration of a tilted vertical-cavity surface-emitting laser (VCSEL) over a grating coupler, Fig. 1, offers certain advantages [2,3]. In this paper we report on an 850 nm single transverse and polarization mode VCSEL for tilted flip-chip integration over a grating coupler on a Si-PIC with SiN waveguides.
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