Abstract
The authors report the power performance of a novel InP junction field-effect transistor (JFET) with a p/sup +/-GaInAs heterostructure gate (HJFET). The HJFET structure was grown by non-hydride metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure and at a substrate temperature of 560/spl deg/C using tertiarybutylphosphine, tertiarybutylarsine as the alternative sources for phosphine and arsine, respectively. p/sup +/ GaInAs was used as the gate material, and n InP as the channel. It is shown that both epitaxial layer design, and device geometry play an important role in device performance. HJFETs with superior performance, an easier fabrication process, and scalability to sub-micron gate lengths compared to homojunction JFETs have been demonstrated. >
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