High-Power, High-Linearity, Heterogeneously Integrated III-V on Si MZI Modulators for RF Photonics Systems

Abstract

In this paper, heterogeneously integrated III–V on silicon (III-V/Si) Mach–Zehnder interferometer (MZI) modulators providing record results for both linearity and high-power operation are described. Devices include hybrid III–V/Si phase modulation sections in a Si MZI, and with a single-drive push-pull operation provide a spurious-free dynamic range (SFDR) as high as 112 dB·Hz2/3 at 10 GHz, comparable to commercial lithium niobate modulators. Optical power levels up to 100 mW into the modulator provide no degradation in device linearity, with modulators demonstrating typical SFDRs of 110 dB·Hz2/3. These III–V/Si MZI modulators, using a 500-nm ‘‘thick’’ Si layer for III–V integration, demonstrate applicability for high-SFDR analog fiber-optic links without need for an erbium-doped fiber amplifier.