High power‐handling SPDT switch in 0.25‐µm GaN technology

Abstract

An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31-dB isolation together with an insertion loss less than 0.5 dB both in Rx- and Tx-mode.