Abstract
The high-power handling capacity of a capacitive microelectromechanical systems (MEMS) power sensor is investigated in this paper. The power sensor is designed for a parallel-plate structure with clamped-clamped beam in X-band (8-12 GHz) applications. The fabrication of this device adopts GaAs monolithic microwave integrated circuit process and MEMS technology. Experiments show that the output response of this sensor is non-linear at high power levels. To analyze this characteristic, the relevant discussion and simulation are given. First, the structure of the sensor is simulated by ANSYS HFSS software to determine the effective sensing region. Then, the mechanical behavior of the sensor analyzed by using the finite element software ANSYS. Through reasonable hypothesis, an electro-mechanical model is proposed. The model considers two effects: 1) the mode shape of the beam and 2) the signal reflection. The calculated results using this model are in good agreement with the measured ones. It indicates the impedance mismatching of the device mainly causes the non-linear response of capacitive power sensor under high-power signal.
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