Abstract
We demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg reflector (DBR) grating. The combined chip-scale SCOW external cavity laser (SCOWECL) has single mode emission with 312 mW of optical power at a drive current of 2.5 A, and exhibits a side mode suppression ratio (SMSR) of 55 dB, peak photon conversion efficiency (PCE) of 10%, low relative-intensity noise (RIN) of ~160 dB/Hz, and an integrated linewidth of 192 kHz. Additionally, we demonstrate a multi-wavelength SCOWECL array comprised of four SCOWAs coupled to SiN-waveguide DBR gratings. The four-element array generates 80 mW per channel when the SCOWAs are driven in parallel (1.25 A/channel) with ~1-nm wavelength spacing centered at 1533 nm. We describe the fabrication and hybrid integration processes. The measured SCOWA-to-waveguide coupling loss is estimated to be 1.6 +/-1.0 dB which agrees well with the simulation.
Highlights
Photonic integrated circuits (PICs) utilizing silicon or silicon nitride (SiN) waveguides have gained prominence as the leading photonic platforms to support a wide variety on-chip optical processing applications
We demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg reflector (DBR) grating
We describe development of a high power external-cavity laser (ECL) that is formed by hybrid integration of an 8-mm-long double-pass InGaAsP/InP SCOWA with a low-loss (0.2 dB/cm) SiN waveguide [1] containing a 18-mm-long distributed Bragg reflector (DBR) grating
Summary
Photonic integrated circuits (PICs) utilizing silicon or silicon nitride (SiN) waveguides have gained prominence as the leading photonic platforms to support a wide variety on-chip optical processing applications. For applications requiring manipulation of wavelengths outside the telecom regime (100 mW) where silicon begins to suffer from increased optical loss due to two-photon absorption (TPA), SiN waveguides are preferred [1]. In both PIC waveguide systems, there is a lack of availability of a native light source, requiring integration of light emitters fabricated from direct bandgap materials. The hybrid integration is accomplished by the fabrication of a photonic multi-chip module submount featuring a SiN waveguide that is encapsulated in a thick silicon oxide cladding layer. We estimate the coupling loss between the SCOWA device and PIC and compare it to a finite-difference time-domain (FDTD) simulation of coupling loss
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