Abstract
To avoid the catastrophic optical mirror damage (COMD), the value of equivalent transverse spot size has increased to 0.83μm through decreasing optical confinement factor (Γ) for quantum well diode lasers, which further reduces the power density on the facet. The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer is designed for high-power, single-transverse-mode operation experimentally, which prevents carrier leakage and increases electro-optical conversion efficiency. According to the calculation result, for the device with uncoated 100-μm-wide stripes, 2-mm-long lasers exhibit a threshold-current density of 290A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , the maximum output power is 1.19W with operating current of 2.0 A. The corresponding internal loss coefficient and differential quantum efficiency are 1.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> and 63% respectively.
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