Abstract
We have developed 1.3 μm quantum dots (Qdot) using a dot in a well (DWELL) structure based on GaAs and 1.55 μm quantum dash (Qdash) based on InP Fabry-Perot lasers using a ridge waveguide operating in continuous wave at room temperature. The quantum dot lasers have demonstrated high power of 135 mW per facet and 50 mW per facet for the quantum dash devices. We have obtained very low relative intensity noise (RIN) with a nearly flat spectrum, around -159 dB/Hz ± 2 dB/Hz within 0.1-10 GHz range for the quantum dots and -160 dB/Hz ± 2 dB/Hz over a wide bandwidth from 50 MHz to 18 GHz for the quantum dash lasers. Recent experimental results are presented and analysed especially those relating to the noise performances and reliability tests to demonstrate the suitability of these new devices for microwave optical links.
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