Abstract

Summary form only given. High power broad area (BA) laser diodes emitting at a wavelength of about 800 nm are key elements for laser technologies in pumping of solid state lasers and medical applications. For most applications, it is useful to diminish the vertical beam divergence. In this paper, this is realised by increasing the vertical spot size at the laser facet by widening the large optical cavity (LOC) structure for AlGaAs-GaAsP broad area laser diodes. The beam quality in vertical and lateral direction as well as the high power and aging behaviour are discussed, which are essential for laser applications.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.