Abstract
Analysing in InGaAsP-InP semiconductor lasers the effects of carrier leakage, non-radiative Auger electron process, inter-valence-band absorption as well as lattice mismatch on lasing characteristics, we have successfully designed and perfectly grown by a modified LPE technique a large optical cavity (LOC) structure in order to obtain the 1. 3 u m InGaAsP-InP lasers with low threshold current density, high output power and high characteristic temperature (To). We have also optimized the LPE procedure and diode-making process which accrue benefits in improving performances of, the devices. The lasers exhibit fairly low threshold current density 5 KA / cm for broad area devices), high output power (up to 3 W in pulsed operation) with high external differential quantum efficiency and high characteristic temperature (T0=150K). It is evident that the quaternary system LOC structure provides a laser which is superior to a conventional DH device.
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