Abstract

Analysing in InGaAsP-InP semiconductor lasers the effects of carrier leakage, non-radiative Auger electron process, inter-valence-band absorption as well as lattice mismatch on lasing characteristics, we have successfully designed and perfectly grown by a modified LPE technique a large optical cavity (LOC) structure in order to obtain the 1. 3 u m InGaAsP-InP lasers with low threshold current density, high output power and high characteristic temperature (To). We have also optimized the LPE procedure and diode-making process which accrue benefits in improving performances of, the devices. The lasers exhibit fairly low threshold current density 5 KA / cm for broad area devices), high output power (up to 3 W in pulsed operation) with high external differential quantum efficiency and high characteristic temperature (T0=150K). It is evident that the quaternary system LOC structure provides a laser which is superior to a conventional DH device.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.