High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl 2/N 2 Mixture

Abstract

High-power 650-nm-band AlGaInP visible laser diodes having stable fundamental-transverse-mode at high temperatures were produced using electron cyclotron resonance reactive ion beam etching (ECR-RIBE). Epilayers were etched using a Cl2/N2 mixture gas, resulting in very smooth surfaces and symmetric laser mesas. Lasers that are 700-µm-long and 6%/80% coated were fabricated. The typical threshold current of these devices was as low as 46 mA at room temperature, and a stable fundamental-mode operation over 30 mW is obtained up to 70°C. The lasers operated for over 1000 h at 60°C under an output power of 25 mW, and their degradation rate was as low as lasers fabricated by the ordinary wet etching process.