Abstract
Abstract An optimized fabrication technology for quantum wires with less side wall scattering needs the understanding how to minimize the scattering mechanisms. We have used magneto transport measurements as a sensor to observe the influence of the dry etching process and the etch mask definition process on the quality of the wire boundaries. The effect of surface roughness, the distribution and density of etch induced scattering centers due to the wire definition process was investigated by an artificial manipulation of the wire boundaries. Side wall damage can be minimized using a low damage electron cyclotron resonance reactive ion beam etching process and a minimal electron beam scanning step for the etch mask exposure.
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