Abstract
For very high voltage, high current devices (>3 kV, >100 A), the use of bipolar SiC devices will be required because of their much higher current densities. These devices have applications in the area of traction control and power transmission. In this report, higher voltage and higher current npnp 4H-SiC thyristors have been achieved. The npnp device is the most promising thyristor structure to date because it allows the use of a low resistivity n-type substrate. A mesa structure was utilized, with all of the doping being done in situ during epitaxy. The device periphery was terminated using a reactive ion etched mesa, and the gate was contacted by performing a trench etch, again with reactive ion etching.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
