Abstract
We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow–orange wavelengths.
Highlights
L ASERS emitting in the yellow–orange spectral range have many applications for example in dermatology [1], DNA sequencing [2], and spectroscopy [3]
We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section
The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells
Summary
L ASERS emitting in the yellow–orange spectral range have many applications for example in dermatology [1], DNA sequencing [2], and spectroscopy [3]. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. One viable approach for reaching the visible spectral range is frequency doubling from infrared (IR) laser radiation, which in turn, requires sources with high output power and narrow linewidth emission [4].
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