Abstract
We demonstrate a widely tunable InGaAs quantum-wells (QWs) distributed Bragg reflector (DBR) laser, in which the DBR section was realized by using butt-jointed InGaAsP (λ=1.46μm) material. In the device process, we explored an optimal chemical etchant applied in the butt-jointed active–passive integration technology. A wide tuning range of 10.7 nm with 19 consecutive channels is obtained with a single tuning current at room temperature (RT). With the help of the heat sink temperature, the tuning range is expanded to 16 nm. A side mode suppression ratio (SMSR) of higher than 34 dB is obtained for all channels at 5 °C to 45 °C. A six-wavelength laser array that can cover a wavelength tuning range of 41.6 nm at 20 °C with a side mode suppression ratio higher than 37 dB in all channels is demonstrated by varying the grating periods. It is a promising light source for methane or multispecies gas detection.
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