Abstract
We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around $1.5~\mu \text{m}$ ) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of $90~\mu \text{m}$ exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.
Highlights
H IGH power broad area pulsed diode lasers operating in the eye-safe spectral range, i.e. within the wavelength range from 1400 to 1700 nm, are becoming increasingly important, for applications including medical instrumentation and range finding / LIDAR systems [1]
Typical high power diode laser structures demonstrated to date, within this and other wavelength ranges, use a thin (
Structures with a broadened asymmetric waveguide and with an active region located very near to the p-cladding were implemented in AlGaAs/GaAs and AlGaAs/GaAs/InGaAs lasers operating at λ
Summary
H IGH power broad area pulsed diode lasers operating in the eye-safe spectral range, i.e. within the wavelength range from 1400 to 1700 nm, are becoming increasingly important, for applications including medical instrumentation and range finding / LIDAR systems [1]. Structures with a broadened asymmetric waveguide and with an active region located very near to the p-cladding were implemented in AlGaAs/GaAs and AlGaAs/GaAs/InGaAs lasers operating at λ
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