Abstract
This paper presents a lateral double diffusion MOSFET (LDMOS) using high permittivity (high-K) material as the dielectric instead of conventional SiO2. The high-K dielectric is capable of cutting the surface peak field of the device, which allows higher drift region doping concentration and results in the improvements of breakdown voltage, on-resistance, and threshold voltage for the device. The mechanism is analyzed in detail and the device behavior with varying parameters are simulated by Medici, whose results demonstrate that device performance is effective improved with the replacement of SiO2 by high-K material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
