Abstract
A novel, high voltage, dual-gate lateral double diffusion MOSFET (LDMOS) with both p-type and n-type conduction is experimentally demonstrated using reduced surface field (RESURF) Si bulk technology. The p-n bimodal LDMOS can enhance drain saturation current by at least 30% with limited cost penalty compared to traditional n-LDMOS. Detailed analysis on the bimodal conduction LDMOS operation and DC output and temperature characteristics is presented. A simplified driving scheme is proposed to drive the dual-gate, p-n bimodal conduction LDMOS.
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