Abstract
A high-performance enhancement-mode ZnO thin-film transistor (TFT) on a glass substrate is demonstrated. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low deposition rate and low temperature. The IDS is as high as 1 mA when biased at the saturation region VDS=10–20 V and VGS=5 V without any post-thermal anneal. The Ion/Ioff ratio is 3×106. The results are among the best ZnO TFTs ever obtained.
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