Abstract
UV photodetectors have gained popularity due to their high precision and capability to filter out interference from solar electromagnetic radiation. A UV detector of (BA)2PbCl4/textured silicon (BA = n-butylammonium) heterojunction was fabricated by depositing (BA)2PbCl4 thin film on textured silicon. High performances of a rapid UV light response (trise = tfall = 0.24 s), high responsivity (8.16 mA/W), and a low detection limit (7.5 μW/cm2) were obtained from the designed detector, which were ascribed the unique morphology and structure of the detector. The rough surface morphology of textured silicon enlarges the light-absorbing area of (BA)2PbCl4 by 20 times. Moreover, a p-n junction was constructed between (BA)2PbCl4 and textured silicon. The electric field naturally present in the heterojunction facilitates the transport of carriers. Furthermore, the (BA)2PbCl4/textured silicon heterojunction exhibited significant selectivity towards UV light and demonstrated remarkable stability and repeatability in the air environment. This work offers a new strategy for developing inexpensive and high-performance UV photodetectors, which is significant for exploring the potential of layered perovskites in new photodetector device applications.
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