Abstract
Room temperature In 0.97Ga 0.03As photodiodes with an InAs 0.36Sb 0.20P 0.44 transparent window layer operating in the mid-infrared region over the wavelength range 1.8–3.4 μm are reported. The InAs 0.36Sb 0.20P 0.44/In 0.97Ga 0.03As heterojunction photodiodes were grown on p-type (100) InAs substrates by liquid phase epitaxy (LPE). Basic detector characteristics have been measured and compared with other detectors in this wavelength range. The typical detectivity of the photodiodes is 1.2 × 10 10 cm Hz 1 2 / W at room temperature, which compares very favourably with that of TE cooled HgCdTe and is at least three times that of cooled PbSe photoconductors. The InAs 0.36Sb 0.20P 0.44/In 0.97Ga 0.03As heterojunction photodiodes offer the advantage of increased sensitivity and extended wavelength response at room temperature compared with that of currently available commercial photodetectors, making them an attractive alternative for a number of mid-infrared applications including optical gas sensors and infrared spectrometers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
