Abstract
The integration of metal–semiconductor nanostructures is of significant interest to the advanced technology development. However, the synthesis methods for metal–semiconductor nanostructures are complicated and require multi-stage processing, which includes the separate synthesis of metallic and semiconductor nanostructures, controlling pH, and dedicated equipments. Herein, we report a one-step in situ synthesis and simultaneous embedding of Ru nanostructures on g-C3N4 nanosheets using the synchrotron x-ray irradiation method. The results indicate that Ru nanostructures were uniformly embedded within the g-C3N4 nanosheets, leading to the formation of Ru—O, RuO2, and Ru—O—Ru chemical bonds. Moreover, three distinct types of Ru nanostructures could be achieved by adjusting the x-ray dose. High-performance triboelectric nanogenerators (TENGs) were fabricated using these three types of Ru-embedded g-C3N4 nanosheets within a PDMS matrix. The output performance of these TENG devices was compared with that of PDMS and g-C3N4/PDMS TENGs. The improved dielectric constant contributes to the high performance of the TENG. The synthesized Ru/g-C3N4 nanostructures are notably significant due to increased contact surface area, charge distribution density, and the formation of a metal–semiconductor heterostructure system. These characteristics lead to high charge transfer rates, improved charge transport, and a higher density of charge trapping centers within the insulating matrix. Thus, we achieved a high TENG peak power density of 4.86 W/m2 during the contact separation process. The practical applicability of the TENG is also demonstrated. Furthermore, a 47 μF capacitor could be charged to 7.8 V in ∼400 s and can be used to continuously drive low power electronic gadgets.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call