Abstract
The trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Comparing with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench beside the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga’s figure of merit (FOM) value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimal parameters of device structure, a high Baliga’s FOM value of 2.28 GW/cm2 is designed. Therefore, the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.
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