Abstract

Transparent conducting electrodes with high transparency and conductivity are necessary components for optoelectronic devices. In this work, a facile wet-chemical lift-off process is first introduced to fabricate Au network flexible transparent electrodes with electrospun polymer fiber network as mask. Low resistance (5.18 Ω sq-1) of the transparent electrode was obtained when the transparency was around 90%, which was comparable to the state-of-the-art transparent electrodes. Low root-mean-square roughness of 23 nm was obtained when the Au nanowire thickness was 30 nm. The perovskite CH3NH3PbI3 photodetector based on the 30 nm thick Au network electrode shows a large linear dynamic range of 138 dB, a high detectivity over 1012 Jones, and better flexibility than that based on the commercial indium tin oxide electrode, which demonstrates that the Au network electrode is a promising flexible transparent conducting electrode for optoelectronic devices.

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