Abstract
High performance 0.5 μm gate length InGaAs/GaAs pseudo-MODFETs are demonstrated on InP substrates by MOVPE heteroepitaxial growth. The transistors show a 300 mS/mm transconductance and a 30 GHz cutoff frequency. A 2:1 multiplexer is also made using the same technology. Preliminary testing indicates that the multiplexer can operate up to 10 Gbit/s.
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