High-Performance Silicon 2 × 2 Thermo-Optic Switch for the 2-$\mu$m Wavelength Band

Li Shen,Lesi Yang,Xiangfeng Peng,Shuang Zheng,Shuhui Li,Xiaoping Cao,Jian Wang,Meng Huang

doi:10.1109/jphot.2019.2921923

Abstract

The 2- $\mu$ m spectral window is emerging as a promising candidate for the next generation communication. We present a 2 × 2 Mach–Zehnder interferometric thermo-optic switch at 2- $\mu$ m waveband. The device is fabricated on a 220 nm thick silicon-on-insulator wafer with standard complementary metal oxide semiconductor (CMOS) process. We demonstrate an over 30 dB extinction ratio under the power consumption of 32.3 mW, with an average switching time of ∼15 μs. This proof of principle optical switch paves a way toward full silicon-based chip-scale interconnects in the 2- $\mu$ m waveband.

Highlights

The 2-μm waveband is attracting increasing interests for expanding communications window to ease capacity issues as the current standard single-mode fibers (SMFs) based near infrared telecommunication network is approaching its theoretical limit [1]
The device is fabricated on a 220 nm thick silicon-on-insulator wafer with standard complementary metal oxide semiconductor (CMOS) process
We demonstrate an over 30 dB extinction ratio under the power consumption of 32.3 mW, with an average switching time of ∼15 μs

Summary

Introduction

The 2-μm waveband is attracting increasing interests for expanding communications window to ease capacity issues as the current standard single-mode fibers (SMFs) based near infrared telecommunication network is approaching its theoretical limit [1]. Over the past few years, the developments in the 2-μm band including high-performance laser sources [4], [5], broad bandwidth amplifier [6], high-speed optical modulators [7] and photodetector [8], and the benchmark low-loss hollow-core photonic bandgap fibers (HC-PBGFs) [9], have enabled a wide range of applications for telecom [10], and for sensing and biomedical monitoring [11] Among these well-established technologies, the integrated complementary metal oxide semiconductor (CMOS) compatible photonic platform like silicon-on-insulator (SOI) could be the preferred solution as its advantages such as high volume, small footprint, and low cost fabrication still exist for this new wavelength band. These results pave the way for the development of compact, low power, and integrated silicon optical switch devices for future 2-μm optical networks

Concept

Phase-Shifter Design and Device Fabrication

Experimental Set Up and Results

Findings

Conclusion