Abstract
Improvements in uniformity of electrical device performance is often not taken into major consideration until a certain maturity level of a technology is reached. In this work, use of technology computer aided design (TCAD) and process compact models (PCM) developed from neural networks demonstrate their utility in process-parameter variation understanding in earlier stages of technology development. A third generation High Performance Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) was modelled and simulated as the device of focus in this study.
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