Abstract
Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory arrays. Uncontrollable oxygen functional groups of GO, however, restrict its application. To obtain stable memory performance, 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) a that can serve as 1,3,4-oxadiazole acceptor was carefully introduced onto the GO framework. Better stability was achieved by increasing the weight ratio of the chemical component from 2:1 to 10:1 in all GO-based solutions. Particularly, rewritable nonvolatile memory characteristics were dependent on the ratio between PBD and GO. PBD:GO devices with a proportion of 10:1 w/w exhibited better memory performance, possessed a higher ON/OFF ratio (>102) at a lower switching voltage of −0.67 V, and had a long retention ability. The interaction between PBD and GO can be demonstrated by transmission electron microscope, scanning electron microscope, thermogravimetric analysis, fourier transform infrared spectra, Raman spectra, X-ray diffraction, and fluorescence spectra. The superior ReRAM properties of the multilayers of GO blended with the PBD nanocomposite are attributed to electron traps caused by the strong electron acceptors.
Highlights
In modern von Neumann computer systems, all the fetching, decoding, and execution of instructions are dependent on binary algorithms
To obtain stable memory performance, we introduced accepting electronic moieties to Graphene oxide (GO) flakes to study the effect of the weight ratio of the chemical component between PBD and GO on electrical memory behaviors
PBD is dispersed in multilayers of GO, resulting in the formation of PBD:GO nanocomposite materials
Summary
In modern von Neumann computer systems, all the fetching, decoding, and execution of instructions are dependent on binary algorithms. Among the emerging memory technologies, resistive random-access memory (ReRAM), which stores binary digital data by denoting “0” and “1” separately as the low and high conductivity in response to an applied electric field, is of great significance for innovation in electronic industries. ReRAM requires rational design and the synthesis of novel functional materials with desired and controllable electronic performance. Organic memories have been proposed to revolutionize electrical applications by providing extremely inexpensive, lightweight, and transparent modules, which can be fabricated onto plastic, glass, or the top layer of the complementary metal-oxide semiconductor (CMOS) circuits [6,7,8,9,10,11,12]. In controlling the device’s performance by means of molecular design and chemical synthesis, organic chemistry, more importantly, provides a treasure trove of functional molecules that can adjust the electronic properties of organic materials
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