Abstract
A UV sensor was fabricated by screen printing indium–tin-oxide (ITO) nanocrystals on to quart glass. The initial printed ITO layer showed a resistivity too high for sensing applications, but considerable improvements were achieved through annealing under external pressure. The effects of this pressurized annealing were investigated using a commercial ITO film. The annealing aided the development of low-resistivity ITO through the repression of complex defects. The feasibility of the ITO sensor was confirmed through annealing coil-shaped ITO sensors under different conditions. Pressurized annealing greatly enhanced the output signal intensity under similar UV illumination conditions.
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