High-Performance Poly-Si Nanowire Thin-Film Transistors Using the $\hbox{HfO}_{2}$ Gate Dielectric

Abstract

High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high- gate dielectric, ultrathin poly-Si NW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 results from the ultrashort gate length , thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.