Abstract
The electric properties of n +− p Mn x Cd y Hg, 1− x− y Te photodiodes with a cut-off wavelength of λ co ∼ 3.3–3.8 μm at 77 K have been studied. The p− n junctions were created using ion implantation of boron into the p-type LPE epitaxial layers. Zero bias resistance-area product at T = 85 K is equal to 1.7 × 10 7 Ω ·. cm 2 for the best sample (λ co = 3.8 μm). For the material under study, this surpasses the values which have been reported up until now for a given spectral region, and is comparable with those of the best Cd x Hg 1− x Te diodes with similar energy gap values. Mechanisms of current flow through the p− n junctions at 77 < T < 200 K without and under background illumination are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
