High Performance P-Channel Schottky Barrier MOSFETs withSelf-Aligned PtSi Source/Drain on Thin Film SOI Substrate

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P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs)with PtSi Schottky barrier source/drain, high-k gate dielectric andmetal gate electrode were fabricated on a thin p-typesilicon-on-insulator (SOI) substrate using a simplified low temperatureprocess. The device works on a fully-depleted accumulation-mode and hasan excellent electrical performance. It reaches Ion/Ioffratio of about 107, subthreshold swing of 65 mV/decade andsaturation drain current of Ids = 8.8 μA/μm at|Vg−Vth| = |Vd| = 1 V for devices with the channellength 4.0 μm and the equivalent oxide thickness 2.0 nm. Comparedto the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smalleroff-state current due to reduction of the PtSi/Si contact area.