High-Performance Oxide Thin-Film Transistors Using a Volatile Nitrate Precursor for Low-Temperature Solution Process

Abstract

Solution-processed InZnO (IZO) thin-film transistors (TFTs) are fabricated using a volatile metal nitrate precursor (Np) with annealing at 300°C. Because the metal Np decomposes at low temperatures, metal oxide bonds were formed, and the organic residue in the oxide thin films was evaporated at low temperature. At 300°C , the IZO thin films with Zn Np were of higher quality than those with Zn acetate precursor due to the reduced atomic disorder and evaporation of residual organics. The mobility of the IZO TFTs with Zn Np was 1.92 cm2/V·s at 300°C annealing.