Abstract
Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlOx/CdTe:Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 106, with a retention time of 3 × 104 s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage ∼0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlOx/CdTe:Sb NW heterojunction after controlled Ar+ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlOx film. This Al/AlOx/CdTe:Sb NW heterojunction will open up opportunities for new memory devices with different configurations.
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