Abstract
A N2O plasma post-treatment process was performed to etch the surface of MWCNTs and modify the density of MWCNTs and dope nitrogen atoms into MWCNTs in high density plasma chemical vapor deposition (HDPCVD) system. The experimental results show improved field emission properties under proper plasma conditions. The turn-on electric field decreased from 2.5 to 1.7 V/μm, and the emission current density increased from 200 to 889 μA/cm2 at an applied field of 4.8 V/μm.
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