Abstract
A detailed study for the high density plasma chemical vapor deposition (HDP-CVD) process was presented to prevent metal distortion issues and metal corrosion risk. The deposition temperature increased and then saturated as the film deposited, based on the correlation of wet-etch rate and deposition temperature. The stress of HDP-CVD film also trended up, but the deposition rate decreased. Lowering of the deposition temperature of HDP-CVD film was key to preventing the metal distortion. A two-step deposition recipe with 10 s Ar cooldown was developed to solve the metal distortion issue on subquarter micron devices.
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