Abstract
As aluminum reactive ion etch (RIE) technology extends to sub-0.20 /spl mu/m technology, a void-free back-end-of-line (BEOL) gap-fill process is one of the major challenges for interconnects. When a stitched word line architecture is employed, the first metal wiring level often follows the minimum ground rule (GR). To maintain low sheet resistance, the aluminum line height cannot be significantly reduced. Therefore, the aspect ratio of current spaces is well over 2.5 and will approach 4.5 with future lithography shrinkages. Deposition temperature constraints make BEOL gap-fill much harder than front-end-of-line (FEOL), where such high aspect ratios are routinely filled. In this paper, a low redeposition rate high density plasma chemical vapor deposition (HDP-CVD) process has been developed at low deposition temperature to fill beyond 3.0 to 1 aspect ratio without void formation.
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