High-performance n-type organic field-effect transistors fabricated by ink-jet printing using a C 60 derivative

Abstract

We report on the performance of ink-jet-printed n-type organic thin-film transistors (OTFTs) based on a C 60 derivative, namely, C 60-fused N-methyl-2-(3-hexylthiophen-2-yl)pyrrolidine (C 60TH-Hx). The new devices exhibit excellent n-channel performance, with a highest mobility of 2.8 × 10 −2 cm 2 V −1 s −1, an I On/I Off ratio of about 1 × 10 6, and a threshold voltage of 7 V. The C 60TH-Hx films show large crystalline domains that result from the influence of an evaporation-induced flow, thus leading to high electron mobility in the ink-jet-printed devices.