Abstract
We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">'</sup> bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /(V·s), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /(V·s) and threshold voltage of -1.1 V.
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