Abstract
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap; e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets.
Highlights
In recent years, non-volatile memories (NVMs) have been developed for power solutions of Internet of Things (IoTs) nodes
Comparing with the voltage-controlled magnetic anisotropy (VCMA)-magnetic tunnel junction (MTJ) reported in 32 nm PTM and 40 nm bulk-Complementary Metal-Oxide-Semiconductor (CMOS), the minimum energy per 1-bit of non-volatile data writing are improved by 68.5% and 48.2%, respectively, with 28 nm FD-SOI CMOS
In this work Spin transfer torque magnetic tunnel junction (STT-MTJ) and VCMA-MTJ have been investigated for next-generation low power nonvolatile working memory applications
Summary
Non-volatile memories (NVMs) have been developed for power solutions of Internet of Things (IoTs) nodes. TAS has effectively decreased the power consumption of the writing is required (switching by the FIMScurrent∼1 method tomA), generate fields,issue whichstill leads to a critical constraint for operation but magnetic the scalability remains unsolved and the FIMS to realize high density and low power memory due to high power consumption, large die area switching speed is lower due to the necessary cooling down after the heating. The recent realization of voltage-controlled MTJ with an electric field (or a voltage) features improved write-read latency, efficient energy consumption, as well as decreased cell area [15,16,17,18,19] In this voltage-controlled magnetic anisotropy (VCMA) method, electron charges are firstly accumulated with the electric field. The energy efficiency of different MTJs will be investigated; reliability issues include MTJ stochastic effects, process variation, thermal stability and dielectric breakdown will be discussed
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