Abstract
Monolithic GaAlAs/GaAs photodiode arrays (PDA's) have been developed as control elements for voltage-controlled switching applications. A p-type GaAs absorbing layer and an n-type GaAlAs window layer were grown by LPE on a semi-insulating GaAs substrate. Individual photodiodes were isolated and were series connected by an overlay metallization. A six cell PDA, having an active area of 1.28 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , produces an open-circuit voltage of 5.3 V and a short-circuit current of 33 ĀµA when subjected to a normally incident power flux of 50 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 865 nm. Such devices may be useful in a variety of voltage-controlled switching applications, opto-isolator circuits, and wherever low power, floating, voltage/bias sources are required.
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