High-performance monolayer or bilayer SiC short channel transistors with metallic 1T-phase MoS2 contact

Abstract

In this paper, high-performance monolayer or bilayer SiC short channel transistors with metallic 1T-Phase MoS2 contact have been proposed and investigated by using ab initio simulations. The results show that monolayer or bilayer SiC Schottky-barrier field-effect transistors (SBFET) could conquer the short channel effect, even if the channel length is reduced to 4.1 nm. The p-type ON-currents of monolayer SiC-SBFET, bilayer AB-stacked SiC-SBFET, and bilayer AA-stacked SiC-SBFET are 1132 μA/μm, 980 μA/μm, and 1457 μA/μm, respectively. The all could satisfy the requirement of the high-performance transistor outlined by International Technology Roadmap for Semiconductors (ITRS, 2013 version) for production year 2028. However, the n-type ON-currents of above SiC-SBFETs are 35 μA/μm, 21 μA/μm, and 229 μA/μm, which are much lower than that of p-type ON-currents. Comparing spectral current and spatial local density of states are used to explore the great differences between the p-type and n-type ON-currents.