Abstract
Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile determining the shape of the mode locked pulses. The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.
Highlights
Semiconductor passively mode locked lasers (MLLs) are capable of emitting stable optical pulse trains in the absence of an external reference clock signal
A thorough characterization of single section quantum dash (QDash) based lasers as a function of cavity length and bias conditions is performed for the first time, which in combination with a simple theoretical analysis reveal interesting aspects for the understanding of this type of MLLs, allowing for the control of some of the important mode locking (ML) characteristics and for the achievement of high peak power subpicosecond pulses at high repetition frequencies
Two-section QDash passively MLLs exhibit a much lower group delay dispersion (GDD) when compared to single section lasers having the same structure and cavity length; in order to obtain short pulses, the two-section device needs to be driven with high reverse absorber bias and low injection currents, which results in low average output powers
Summary
Semiconductor passively mode locked lasers (MLLs) are capable of emitting stable optical pulse trains in the absence of an external reference clock signal Their compact size, ease of fabrication and low power consumption make them interesting for a variety of applications including high bit rate optical time division multiplexing, clock recovery and millimeter wave generation. A thorough characterization of single section quantum dash (QDash) based lasers as a function of cavity length and bias conditions is performed for the first time, which in combination with a simple theoretical analysis reveal interesting aspects for the understanding of this type of MLLs, allowing for the control of some of the important ML characteristics and for the achievement of high peak power subpicosecond pulses at high repetition frequencies. A comparison of these devices with classical two-section MLLs based on the same QDash structures is presented
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