Abstract
Dark current has become a significant limiting factor for the development of the Type II InAs/GaSb superlattices technology. Experimental results showed that at liquid nitrogen temperature the dominating dark current under reverse bias is the generation-recombination current before the tunneling current turns on. Recent research on the source of the dark current indicated that the Auger recombinations might play a very important role in the superlattice diode dark current. With proper design of the superlattice structure, we have been able to reduce the dark current several orders of magnitude in the LWIR range. The superlattice diode performance was also improved dramatically. Infrared focal plane arrays based on these superlattices will also be discussed.
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