Abstract
A novel amorphous oxide TFT Enhancement/Depletion (E/D) inverter through uni-/bi-layer channel hybrid integration with conventional process is demonstrated. The device's threshold voltages (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> ) is strictly controlled and the fabrication technique is specially designed. Comparing to the reported high speed bootstrapped inverter, the output swing, switching voltage gain and noise margin of E/D inverter are greatly improved and only the ring oscillator's speed is slightly degraded while with a small supply voltage of 5V.
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