Abstract
In this work, high-performance low-temperature poly-Silicon bottom-gate TFTs with single grain boundary perpendicular to the current flow in the channel regions have been demonstrated. A lateral grain growth of 0.75 μm in length could be artificially grown via the super lateral growth phenomenon using excimer laser irradiation with the plateau structure. Consequently, bottom-gate TFTs made by this method exhibit higher field-effect-mobility, lower leakage current, steeper subthreshold slope, larger on/off current ratios and improved device uniformity owing to this location-manipulated lateral grains. In addition, it shows better reliability because of the smooth interface between gate dielectric and poly-Si channel films.
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